Sb2Te3 Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications | ACS Applied Nano Materials
Chodník výmena pence ruska vesta mk 4 neodpustiteľný jedinečný fosílne
Quantification of Ion-Implanted Single-Atom Dopants in Monolayer MoS2 via HAADF STEM Using the TEMUL Toolkit | Microscopy and Microanalysis | Cambridge Core
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Proximity-induced superconductivity in (Bi1−xSbx)2Te3 topological-insulator nanowires | Communications Materials